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課程名稱 |
寬能隙半導體技術
Wide Gap Semiconductor Technologies |
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開課學期 |
100-1 |
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授課對象 |
電機資訊學院 電機工程學研究所 |
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授課教師 |
馮哲川 |
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課號 |
OE5026 |
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課程識別碼 |
941EU0350 |
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班次 |
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學分 |
3 |
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全/半年 |
半年 |
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必/選修 |
選修 |
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上課時間 |
星期四5,6,7(12:20~15:10) |
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上課地點 |
博理212 |
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備註 |
本課程以英語授課。
總人數上限：30人 |
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Ceiba 課程網頁 |
http://ceiba.ntu.edu.tw/1001OE5026 |
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課程簡介影片 |
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核心能力關聯 |
核心能力與課程規劃關聯圖 |
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課程大綱
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課程概述 |
Wide Gap Semiconductor Technologies (WGST), 2011 Fall semester
Text book contents
Preface Foreword
1. Introduction
2. Background
3. Physics of Gallium Nitride and Related Compounds
4. GaN Growth
5. p-Type GaN Obtained by Electron Beam Irradiation
6. n-Type GaN
7. P-Type GaN
8. InGaN
9. Zn and Si Co-Doped InGaN/AIGaN Double-Heterostructure Blue and Blue-Green LEDs
10. InGaN Single-Quantum-well LEDs
11. Room-Temperature Pulsed Operation of Laser Diodes
12. Emission Mechanisms of LEDs and LDs
13. Room Temperature CW Operation of InGaN MQVV LDs
14. Latest Results: Lasers with Self-Organized InGaN Quantum Dots
15. Conclusions
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課程目標 |
1) Contents: consisting of four major parts as
[A] Fundamentals
Introduction to Wide Gap Semiconductors; physics and properties of GaN, SiC, ZnO & related materials; GaN-based Quantum Wells (QWs) and superlattices (SLs); Structures of GaN-based light emitting diode (LED) and laser diode (LD); Basics of compound semiconductor epitaxy growth; Elements of molecular beam epitaxy (MBE) and metalorganic chemical vapor deposition (MOCVD); Epitaxial GaN-based materials and structures; Key characterization techniques;
[B] Structures, properties and MOCVD growth of III-Nitrides
MOCVD systems; Substrates; MO precursors and source materials; Preparation prior to epitaxy; Buffer growth and Physics; Un-doped GaN; Si-doped n-type GaN; Mg-doped p-type GaN; InGaN and phase separation; AlGaN and AlN; InGaN-GaN multiple quantum well (MQW); InGaN-based LED; InGaN-based LD; AlGaN-GaN SL; AlGaN-based UV detectors; Deep UV light emitters;
[C] Advanced Studies
Penetrating optical, electrical and structural analysis; Optoelectronic device design; Development of blue LEDs and LDs. Wavelengths tuning by controlling the composition. GaN-based LED & LD with various wavelengths, ranging in red-yellow-green-blue-violet, in one substrate material. Mass production and fast characterization of GaN materials and structures;
[D] Applications of wide gap semiconductors
Display technology; Solid state lighting; Optical Communication; Optics; Photonics; Automobiles; Power electronics; Solar cells; Aero- and space-technology.
Details can also be seen from the contents of the text book.
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課程要求 |
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預期每週課後學習時數 |
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Office Hours |
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指定閱讀 |
pre-courses required : General College Physics |
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參考書目 |
The Blue Laser Diode - The Complete Story
by Nakamura, Shuji, Pearton, Stephen, and Fasol, Gerhard (Springer, 2000)
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評量方式
(僅供參考) |
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No. |
項目 |
百分比 |
說明 |
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1. |
Homework |
30% |
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2. |
mid-term exam |
30% |
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3. |
final exam |
40% |
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週次 |
日期 |
單元主題 |
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第1週 |
9/15 |
Ch1-5 |
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第2週 |
9/22 |
Ch1-5 |
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第3週 |
9/29 |
Ch1-5 |
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第4週 |
10/06 |
Ch1-5 上課延長一小時 |
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第5週 |
10/13 |
停課 |
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第6週 |
10/20 |
Ch6-8 上課延長一小時 |
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第7週 |
10/27 |
Ch6-8 上課延長一小時 |
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第8週 |
11/03 |
Ch6-8 |
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第9週 |
11/10 |
Ch6-8 |
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第10週 |
11/17 |
Mid-exam |
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第11週 |
11/24 |
Ch 9-15 |
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第12週 |
12/01 停課 改至 12/05 |
Ch 9-15 |
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第13週 |
12/08 |
Ch 9-15 |
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第14週 |
12/15 |
Ch 9-15 |
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第15週 |
12/22 |
Ch 9-15 |
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第16週 |
12/29 |
Ch 9-15 |
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第17週 |
1/05 |
review |
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第18週 |
01/12 |
Final-exam |
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